PM100CLA060 FLAT-BASE TYPE INSULATED PACKAGE MITSUBISHI JAPAN

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FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1μm fine rule process.
For example, typical Vce(sat)=1.5V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each conservation
upper and lower arm of IPM.
c) New small package
Reduce the package size by 10%, thickness by 22% from
S-DASH series.
• 3φ 100A, 600V Current-sense IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, shortcircuit,
over-temperature & under-voltage (P-Fo available
from upper arm devices)
• Acoustic noise-less 11kW class inverter application